Abstract
Growth of GaN on sapphire (0001) substrates by metalorganic molecular beam epitaxy (MOMBE) was studied using triethyl gallium (TEGa) and rf plasma excited active nitrogen. A series of samples were grown under various TEGa flow rates while growth temperature (800°C) and nitrogen supply were fixed. With increasing TEGa flow rate, the dominant polytype of grown layer changed from hexagonal GaN (h-GaN) to cubic GaN (c-GaN). From the dependence of growth rate on TEGa flow rates, it was revealed that a Ga-stabilized growth condition results in the growth of c-GaN. This preferential growth mode was applied to the growth of c-GaN on cubic 3C-SiC (001) substrates.
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