Abstract
A novel fabrication process for planar n-on-p junction HgCdTe infrared photodiodes has previously been demonstrated based on H2/CH4 plasma-induced type conversion in a parallel-plate reactive ion etching (RIE) tool. In this work, it is demonstrated that high-performance photodiodes can also be fabricated based on H2/CH4/Ar plasma-induced type conversion in an inductively coupled plasma (ICP) RIE plasma tool. This tool has significantly greater control over the plasma condition, and the plasma condition for the type conversion process is significantly different to that associated with the junction formation process that has previously been demonstrated based on the parallel-plate RIE reactor. Photodiodes have been fabricated based on different ICPRIE plasma process conditions, and characterized by current–voltage and noise measurements. The performance characteristics of these photodiodes are comparable to those reported for diodes, based on established fabrication processes based on ion implantation or ion beam milling. The effects of the ICPRIE process parameters used for junction formation on the respective photodiode performance characteristics are investigated in terms of the plasma-induced type conversion mechanisms.
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