Abstract
We report on the catalytic growth of multiwalled carbon nanotubes by plasma enhanced chemical vapor deposition using Ni and Co catalyst deposited on SiO2, Si3N 4,ITO and TiN Xbarrier layers; layers which are typically used as diffusive barriers of the catalyst material. Results revealed higher growth rates on conductive ITO and TiN Xas compared to non con-ductiveSiO2, and Si3N 4,barriers. Micrograph images reveal the growth mechanism for nanotubes grown on SiO2, Si3N 4 and ITO to be tip growth while base growth was observed for the TiN X barrier layer. Initial conclusion suggests that conductive diffusion barrier surfaces promotes growth rates however it is possible that multiwalled carbon nanotubes grown onSiO2, and Si3N 4,were encumbered as a result of the formation of silicide as shown in the results here.
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