Abstract

We report magnetotransport measurements performed on a 10 nm $n$-type $\mathrm{PbTe}∕{\mathrm{Pb}}_{0.9}{\mathrm{Eu}}_{0.1}\mathrm{Te}$ quantum well grown on a ${\mathrm{BaF}}_{2}$ substrate. In contrast to previous work, both the Hall and longitudinal resistances show a clearly defined signature of the integer quantum Hall effect with no sign of parallel conduction. Due to the large carrier density, the occupation of two longitudinal subbands and one oblique valley subband leads to an unusual sequence of filling factors.

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