Abstract
The broken processes of carbon-rich conducting filament have been clarified in composite of [6, 6]-phenyl C61-butyric acid methyl ester (PCBM) and poly(4-vinyl phenol) (PVP) based resistive memory devices. Here, the multistage resistive switching processes in Al/PCBM + PVP/Al sandwich construction were reported, which exhibits a typical nonvolatile WORM storage effect, and these several states are well separated by a resistance ratio of 1: (5.01 × 101): (2.08 × 102): (5.45 × 102): (2.42 × 103). The Al/PCBM + PVP/Al memory devices feature multistate data storage, long retention time (1 × 105 s), and large memory window (maximum ON/OFF ratio, ∼104). Furthermore, conductance quantization during resistive switching processes was analyzed. This work might promote and improve the understanding and awareness of resistive switching mechanism for organic-based memory devices.
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