Abstract
A layer of 40 nm-thick Ag–SiN film with Ag nano-particles embedded anddistributed randomly in the SiN thin film were deposited by the methodof radiant-frequency magnetron sputtering. Specimens orderly comprisinga random Ag–SiN film and an optical phase change recording layer wereexposed to a focused laser beam with wavelength of 690 nm. It is shownthat, with a random Ag–SiN layer deposited above the recording layer.Calculation by the finite difference time domain method of a40 nm-thick SiN film under a Gaussian beam irradiation has been carriedout to simulate the near-field distribution in the film, which showed ahuge local near-field intensity enhancement of about 200 times if smallAg particles with diameter of 6 nm were modelled in the SiN film in thecentral region of the incident laser spot.
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