Abstract
We present investigations of the carrier transport through a highly doped semiconducting(Sm) n-InSb-film sandwiched between two superconducting(S) electrodes. We measured the I(V)- and dV dI ( V) -characteristics in dependence on the temperature and the influence of an external rf-field. These characteristics show a subharmonic energy gap structure(SGS) and an excess- or a deficit-current, indicating the occurrence of multiple Andreev-reflection(AR). The theoretical background of AR is given in terms of the OTBK-model. We proposed and calculated some modifications of this theory.
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