Abstract
Advanced transistors strongly require access resistance reduction, and the most dominant factor in parasitic resistance components is contact resistance at the metal/semiconductor interface. This is more challenging in p-type contacts, where increasing Ge content in SiGe contact epilayers results in quite low solubility of boron. Melt laser annealing (MLA) is known as a way of surpassing such solubility limit owing to metastable dopant incorporation into semiconductor materials. In this study, we combine MLA with co-implantation of boron and gallium into high Ge content SiGe:B epilayers to realize multilayered highly-active dopant distribution which should be more favorable for process integration.
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