Multilayer graphene nanoribbon floating gate transistor for flash memory

Abstract

Floating gate transistor is the basic building block of nonvolatile flash memory, which is one of the most widely used memory gadgets in modern micro and nano electronic applications. As silicon based integrated circuit technologies are approaching the limits of scaling, carbon based nanoelectronic devices are emerging as the future platform for low power, low cost, high performance and environment friendly circuits and systems. In this paper, a new concept of carbon nanostructure based floating gate transistor is presented. We have demonstrated a design using multilayer graphene nanoribbon (MLGNR) as the channel material and carbon nanotube (CNT) as the floating gate in the floating gate transistor. We have performed analysis of the charge accumulation mechanism in the floating gate and its dependence on the applied terminal voltages. We have observed that the proposed floating gate transistor can be operated at a much lower voltage compared to the conventional silicon based floating gate devices.