Multifinger MOSFETs’ Optimization Considering Stress and INWE in Static CMOS Circuits

Abstract

Strain engineering and inverse narrow width effect (INWE) are among the main causes of layout-dependent variations in narrow width devices. Transistor sizing and layout without considering these effects at a prelayout stage may result in suboptimal design and design/layout iterations. In this paper, we model the channel stress variations in multifinger gate structure (MFGS) empirically using 3-D technology computer aided design simulations. Thereafter, we use these stress models along with a model for INWE to establish a physics-based relationship between effective drive current and number of fingers in MFGS. We also design single-stage combinational standard cells and predict the values of their logical effort using our approach. The performance of the standard cells using our approach improves significantly compared with the conventional approach. Inverter chains (buffers) are representative and extensively used multistage circuits. Using our model of effective drive current, we propose a methodology to optimize the buffer designed and layout to maximize performance in stress-enabled technologies. We observe that the proposed methodology results in a significant reduction in power dissipation up to 35% and reduction in silicon area up to 43% as compared with the existing methodologies.