Multiexciton Generation by a Single Photon in Nanocrystals

Multiple exciton generation (MEG) is an effect that semiconductor nanocrystals (NCs) quantum dots (QDs) generate multiple excitons (electron-hole pairs) through absorbing a single high energy photon. It can translate the excess photon energy of bandgap (Eg) into new excitons instead of heat loss and improve the photovoltaic performance of solar cells. However, the theories of MEG are not uniform. The main MEG theories can be divided into three types. The first is impact ionization. It explains MEG through a conventional way that a photogenerated exciton becomes multiple excitons by Coulomb interactions between carriers. The Second is coherent superposition of excitonic states. Multiple excitons are generated by the coherent superposition of single photogenerated exciton state with enough excess momentum and the two-exciton state with the same momentum. The third is excitation via virtual excitonic states. The nanocrystals vacuum generates a virtual biexciton by coulomb coupling between two valence band electrons. The virtual biexciton absorbing a photon with an intraband optical transition is converted into a real biexciton. This paper describes the MEG influence on solar photoelectric conversion efficiency, concludes and analyzes the fundamentals of different MEG theories, the MEG experimental measure, their merits and demerits, calculation methods of generation efficiency.

We present a theoretical model, which explains a very efficient multi-exciton generation by a single photon with energy greater than the two effective energy gap - the new physical phenomena observed recently in nanocrystals. Article not available.

Solar energy production, one of the world's most important unsolved problems, has the potential to be a source of clean, renewable energy if scientists can find a way of generating cheap and efficient solar cells. Generation of multiple excitons from single photons is one way to increase the efficiency of solar energy collection, but the process suffers from low efficiency in bulk materials. An increase of multiexciton generation efficiency in nanocrystals was proposed by Nozik in 2002 and demonstrated by Schaller and Klimov in 2004 in PbSe nanocrystals. Since then, scientists have observed efficient multiexciton generation in nanostructures made of many semiconductors using various measurement techniques. Although the experimental evidence of efficient carrier multiplication is overwhelming, there is no complete theory of this phenomenon. Researchers cannot develop such a theory without a self-consistent description of the Coulomb interaction and a knowledge of mechanisms of electron and hole thermalization in nanostructures. The full theoretical description requires the strength of the Coulomb interaction between exciton and multiexciton states and the thermalization rates, which both vary with the dimensionality of the confining potential. As a result, the efficiency of multiexciton generation depends strongly on the material and the shape of the nanostructure. In this Account, we discuss the theoretical aspects of efficient carrier multiplication in nanostructures. The Coulomb interaction couples single excitons with multiexciton states. Phenomenological many-electron calculations of the evolution of single-photon excitations have shown that efficient multiexciton generation can exist only if the rate of the Coulomb mixing between photo-created exciton and biexciton states is significantly faster than the rate of exciton relaxation. Therefore, to increase multiexciton generation efficiency, we need to either increase the exciton-biexciton mixing rate or suppress the exciton relaxation rate. Following this simple recipe, we show that multiexciton generation efficiency should be higher in semiconductor nanorods and nanoplatelets, which have stronger exciton-biexciton coupling due to the enhancement of the Coulomb interaction through the surrounding medium.

The multiple exciton generation (MEG), a process in which two or even more electron-hole pairs are created in nanostructured semiconductors by absorbing a single high-energy photon, is fundamentally important in many fields of physics, e.g., nanotechnology and optoelectronic devices. Many high-performance optoelectronic devices can be achieved with MEG where quite an amount of the energy of an absorbed photon in excess of the band gap is used to generate morei additional electron-hole pairs instead of rapidly lost heat. In this review, we present a survey on both the research context and the recent progress in the understanding of MEG. This phenomenon has been experimentally observed in the 0D nanocrystals, such as PbX (X=Se, S, and Te), InX (X=As and P), CdX (X=Se and Te), Si, Ge, and semi-metal quantum dots, which produce the differential quantum efficiency as high as 90%10%. Even more remarkably, experiment advances have made it possible to realize MEG in the one-dimensional (1D) semiconductor nanorods and the two-dimensional (2D) nano-thin films. Theoretically, three different approaches, i.e., the virtual exciton generation approach, the coherent multiexciton mode, and the impact ionization mechanism, have been proposed to explain the MEG effect in semiconductor nanostructures. Experimentally, the MEG has been measured by the ultrafast transient spectroscopy, such as the ultrafast transient absorption, the terahertz ultrafast transient absorption, the transient photoluminescence, and the transient grating technique. It is shown that the properties of nanostructured semiconductors, e.g., the composition, structure and surface of the material, have dramatic effects on the occurrence of MEG. As a matter of fact, it is somewhat hard to experimentally confirm the signature of MEG in nanostructured semiconductors due to two aspects:i) the time scale of the MEG process is very short; ii) the excitation fluence should be extremely low to prevent the multi-excitons from being generated by multiphoton absorption. There are still some controversies with respect to the MEG effect due to the challenge in both the experimental measurement and the explanation of signal data. The successful applications of MEG in practical devices, of which each is composed of the material with lower MEG threshold and higher efficiency, require the extraction of multiple charge carriers before their ultrafast annihilation. Such an extraction can be realized by the ultrafast electron transfer from nanostructured semiconductors to molecular and semiconductor electron acceptors. More recently, an experiment with PbSe quantum dot photoconductor has demonstrated that the multiple charge extraction is even as high as 210%. It is proved that MEG is of applicable significance in optoelectronic devices and in ultra-efficient photovoltaic devices. Although there are still some challenges, the dramatic enhancement of the efficiency of novel optoelectronic devices by the application of MEG can be hopefully realized with the rapid improvement of nanotechnology.

In nondegenerate FWM (NDFWM) experiments employing spectrally narrower pulses, we can limit the FWM processes to specific ones. Thus, NDFWM measurements will give new insights on the excitonic dynamics. In our previous study using spectrally-resolved DFWM techniques on a self-organized quantum-well material, (C/sub 6/H/sub 13/NH/sub 3/)/sub 2/PbI/sub 4/, it has been shown that two exciton states, including biexciton and weakly interacting two-exciton state, play an important role in FWM processes. However, the signals arising from various two-exciton states overlapped spectrally with each other in DFWM experiments. In this study, we have employed NDFWM techniques on (C/sub 6/H/sub 13/NH/sub 3/)/sub 2/PbI/sub 4/ to observe the contributions of two-exciton states separately.

We have shown theoretically that efficient multiple-exciton generation (MEG) by a single photon can be observed in small nanocrystals. Our quantum simulations that include hundreds of thousands of exciton and multiexciton states demonstrate that the complex time-dependent dynamics of these states in a closed electronic system yields a saturated MEG effect on a picosecond time scale. Including phonon relaxation confirms that efficient MEG requires the exciton-biexciton coupling time to be faster than exciton relaxation time.

Carrier multiplication (CM), the process of generating multiple charge carriers from a single photon, offers an opportunity to exceed the Shockley-Queisser limit in photovoltaic applications. Despite extensive research, no material has yet achieved ideal CM efficiency, primarily due to significant energy losses from carrier-lattice scattering. In this study, we demonstrate that monolayer MoSe2 can attain the theoretical maximum CM efficiency permitted by the energy-momentum conservation principle, using ultrafast transient absorption spectroscopy. By resolving the scatter-free ballistic transport of hot carriers and validating our findings with first-principles calculations, we identify the cornerstone of optimal CM in monolayer MoSe2: superior hot-carrier dynamics characterized by suppressed energy dissipation via minimized carrier-lattice scattering and the availability of abundant CM pathways facilitated by 2Eg band nesting. Comparative analysis with bulk MoSe2 further emphasizes the enhanced CM efficiency in the monolayer, attributed by superior hot-carrier diffusion and access to additional CM pathways. These results position monolayer MoSe2 as a promising candidate for high-performance optoelectronic applications, providing a robust platform for next-generation energy conversion technologies.

Semiconducting nanomaterials such as single-walled carbon nanotubes (SWCNTs) and nanocrystals (NCs) exhibit unique size-dependent quantum properties. They have therefore attracted considerable attention from the viewpoints of fundamental physics and functional device applications. SWCNTs and NCs also provide an excellent new stage for experimental studies of many-body effects of electrons and excitons on optical processes in nanomaterials. In this Account, we discuss multiple exciton generation and recombination in SWCNTs and NCs for next-generation photovoltaics. Strongly correlated ensembles of conduction-band electrons and valence-band holes in semiconductors are complex quantum systems that exhibit unique optical phenomena. In bulk crystals, the carrier recombination dynamics can be described by a simple model, which includes the nonradiative single-carrier trapping rate, the radiative two-carrier recombination rate, and the nonradiative three-carrier Auger recombination rate. The nonradiative Auger recombination rate determines the carrier recombination dynamics at high carrier density and depends on the spatial localization of carriers in two-dimensional quantum wells. The Auger recombination and multiple exciton generation rates can be advantageously manipulated by nanomaterials with designated energy structures. In addition, SWCNTs and NCs show quantized recombination dynamics of multiple excitons and carriers. In one-dimensional SWCNTs, excitons have large binding energies and are very stable at room temperature. The extremely rapid Auger recombination between excitons determines the photoluminescence (PL) intensity, the PL linewidth, and the PL lifetime. SWCNTs can undergo multiple exciton generation, while strong exciton-exciton interactions and complicated exciton structures affect the quantized Auger rate and the multiple exciton generation efficiency. Interestingly, in zero-dimensional NC quantum dots, quantized Auger recombination causes unique optical phenomena. The breakdown of the k-conversion rule and strong Coulomb interactions between carriers in NCs enhance Auger recombination rate and decrease the energy threshold for multiple exciton generation. We discuss this impact of the k-conservation rule on two-carrier radiative recombination and the three-carrier Auger recombination processes in indirect-gap semiconductor Si NCs. In NCs and SWCNTs, multiple exciton generation competes with Auger recombination, surface trapping of excitons, and cooling of hot electrons or excitons. In addition, we explore heterostructured NCs and impurity-doped NCs in the context of the optimization of charge carrier extraction from excitons in NCs.

The population dynamics of single exciton and biexciton states in a simple model of a spherical semiconductor nanostructure is modeled numerically in the presence of Coulomb coupling between single and two exciton states and a dissipation channel in order to study the transient biexciton population that occurs in an optically excited semiconductor nanocrystal. The results show that the system evolution strongly changes if the dissipation is included. In a certain range of parameters, the growth of the exciton number (multiple exciton generation process) is fast (on picosecond time scale) and the following decay (Auger process) is much slower (hundreds of picoseconds). In some cases, the maximum occupation of the biexciton state increases when dissipation is included. The dynamics of an ensemble of nanostructures with a certain size dispersion is studied by averaging over the energy of the biexciton state which can be different for each single nanostructure. The validity of Markov and secular approximation is also verified.

We demonstrate novel methods for the study of multiple exciton generation from a single photon absorption event (carrier multiplication) in semiconductor nanocrystals (or nanocrystal quantum dots) that are complementary to our previously reported transient absorption method. By monitoring the time dependence of photoluminescence (PL) from CdSe nanocrystals via time-correlated single photon counting, we find that carrier multiplication is observable due to the Auger decay of biexcitons. We compare these data with similar studies using transient absorption and find that the two methods give comparable results. In addition to the observation of dynamical signatures of carrier multiplication due to the Auger decay, we observe spectral signatures of multiple excitons produced from the absorption of a single photon. PL spectra at short times following excitation with high-energy photons are red-shifted compared to the single-exciton emission band, which is consistent with previous observations of significant exciton-exciton interactions in nanocrystals. We then show using a combination of transient absorption and time-resolved PL studies that charge transfer between a nanocrystal and a Ru-based catalyst model compound takes place on a time scale that is faster than Auger recombination time constants, which points toward a possible design of donor-acceptor assemblies that can be utilized to take advantage of the carrier multiplication process.

During carrier multiplication (CM), also known as multiexciton generation (MEG), absorption of a single photon produces multiple electron-hole pairs, or excitons. This process can appreciably increase the efficiency of photoconversion, which is especially beneficial in photocatalysis and photovoltaics. This Account reviews recent progress in understanding the CM process in semiconductor nanocrystals (NCs), motivated by the challenge researchers face to quickly identify candidate nanomaterials with enhanced CM. We present a possible solution to this problem by showing that, using measured biexciton Auger lifetimes and intraband relaxation rates as surrogates for, respectively, CM time constants and non-CM energy-loss rates, we can predict relative changes in CM yields as a function of composition. Indeed, by studying PbS, PbSe, and PbTe NCs of a variety of sizes we determine that the significant difference in CM yields for these compounds comes from the dissimilarities in their non-CM relaxation channels, i.e., the processes that compete with CM. This finding is likely general, as previous observations of a material-independent, "universal" volume-scaling of Auger lifetimes suggest that the timescale of the CM process itself is only weakly affected by NC composition. We further explore the role of nanostructure shape in the CM process. We observe that a moderate elongation (aspect ratio of 6-7) of PbSe NCs can cause up to an approximately two-fold increase in the multiexciton yield compared to spherical nanoparticles. The increased Auger lifetimes and improved charge transport properties generally associated with elongated nanostructures suggest that lead chalcogenide nanorods are a promising system for testing CM concepts in practical photovoltaics. Historically, experimental considerations have been an important factor influencing CM studies. To this end, we discuss the role of NC photocharging in CM measurements. Photocharging can distort multiexciton dynamics, leading to erroneous estimations of the CM yield. Here, we show that in addition to distorting time-resolved CM signals, photocharging also creates spectral signatures that mimic CM. This re-emphasizes the importance of a careful analysis of the potential effect of charged species in both optical and photocurrent-based measurements of this process.

Carrier multiplication (CM), where a single high-energy photon generates multiple electron-hole pairs, offers a promising route to enhance the efficiency of solar cells and photodetectors.Transition metal dichalcogenides, such as 2H-MoTe2 and 2H-WSe2, exhibit efficient CM. Given the similar electronic band structure of 2H-MoSe2, it is expected to show comparable CM efficiency. In this study, we establish the occurrence and efficiency of CM in a solution-processed thin film of bulk-like 2H-MoSe2. We characterize the dynamics of excitons and free charge carriers by using ultrafast transient optical absorption and terahertz spectroscopy. At higher photon energy the efficiency is comparable to literature results for 2H-MoTe2 grown by chemical vapor deposition (CVD) or in bulk crystalline form. At higher photon energies the experimental CM efficiency is reproduced by theoretical modeling. We also observe CM for photon energies below the energetic threshold of twice the band gap, which is most probably due to subgap defect states. Transient optical absorption spectra of 2H-MoSe2 exhibit features of trions from which we infer that photoexcitation leads to free charge carriers. We find no signatures of excitons at the indirect band gap. From analysis of the frequency dependence of the terahertz conductivity we infer that scattering of charge carriers in our sample is less than for CVD grown or bulk crystalline 2H-MoTe2. Our findings make solution-processed 2H-MoSe2 an interesting material for exploitation of CM in photovoltaic devices.

Semiconductor quantum dots (QDs) are the subject of intensive research worldwide due to a number of novel properties which make them of interest for both fundamental science and technological applications. QDs are of particular interest for solar cell applications due to their ability to increase efficiency via the generation of multi-excitons from a single photon. The efficiency of multi-exciton generation (MEG) in colloidal QDs is determined by the competition between MEG and other hot electron-cooling processes. The core/shell QDs with type-II band alignment offers extra degree of freedom in mediating both the optical dipoles and the Coulomb interaction between charges in such structures for the benefit of elevated MEG efficiency.

Multiple exciton generation (MEG), the generation of multiple electron–hole pairs from a single high-energy photon, can enhance the photoconversion efficiency in several technologies including photovoltaics, photon detection and solar-fuel production1,2,3,4,5,6. However, low efficiency, high photon-energy threshold and fast Auger recombination impede its practical application1,7. Here we achieve enhanced MEG with an efficiency of up to 87% and photon-energy threshold of two times the bandgap in highly stable, weakly confined formamidinium tin–lead iodide perovskite nanocrystals (FAPb1–xSnxI3 NCs; x ≤ 0.11). Importantly, an MEG-driven increment in the internal photocurrent quantum efficiency exceeding 100% with a low threshold is observed in such NC-sensitized photoconductors under ultraviolet-light illumination. The MEG enhancement mechanism is found to be mediated by the slower cooling and reduced trapping of hot carriers above the MEG threshold after the partial substitution of Pb by Sn. Our findings corroborate the potential importance of narrow-bandgap perovskite NCs for the development of optoelectronics that could benefit from MEG.

Carrier multiplication describes an interesting optical phenomenon in semiconductors whereby more than one electron-hole pair, or exciton, can be simultaneously generated upon absorption of a single high-energy photon. So far, it has been highly debated whether the carrier multiplication efficiency is enhanced in semiconductor nanocrystals as compared with their bulk counterpart. The controversy arises from the fact that the ultrafast optical methods currently used need to correctly account for the false contribution of charged excitons to the carrier multiplication signals. Here we show that this charged exciton issue can be resolved in an energy transfer system, where biexcitons generated in the donor nanocrystals are transferred to the acceptor dyes, leading to an enhanced fluorescence from the latter. With the biexciton Auger and energy transfer lifetime measurements, an average carrier multiplication efficiency of ~17.1% can be roughly estimated in CdSe nanocrystals when the excitation photon energy is ~2.46 times of their energy gap.