Abstract
Great efforts have been devoted to achieving efficient Si-based light-emitting devices. Here we report new light-emitting devices fabricated with Tb2O3 on Si substrates. Intense green electroluminescence was observed, with a turn-on voltage of about 8 V. The green emission is attributed to the characteristic transitions of Tb3+ ions in Tb2O3. The electroluminescence mechanisms of the Tb2O3 light-emitting devices are discussed. In addition, visible and near infrared electroluminescence was observed in rare-earth (Eu3+, Sm3+ and Yb3+) doped Tb2O3 light-emitting devices.
Highlights
Great efforts have been devoted to achieving efficient Si-based light-emitting devices
We report new light-emitting devices fabricated with Tb2O3 on Si substrates
Our results show that Tb2O3 light-emitting devices (LEDs) can be potentially used in display, optical communication, and other Si-based optoelectronics
Summary
Great efforts have been devoted to achieving efficient Si-based light-emitting devices. We report new light-emitting devices fabricated with Tb2O3 on Si substrates. Intense green electroluminescence was observed, with a turn-on voltage of about 8 V. The green emission is attributed to the characteristic transitions of Tb3+ ions in Tb2O3.
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