Abstract
Magnetic random access memory (MRAM) is one of the most promising candidates to provide energy-efficient and nonvolatile memory. We present a new MRAM design using a pair of cells where each cell can store two bits of information. The pair cells have a parallelogram shape to induce broken-shape magnetic anisotropy along the short axis of the cell. One important advantage of the pair cells is that they can share the same word- and bit-lines intersection in the MRAM architecture. This means that the number of electrical current lines can be reduced and lead to higher recording density. Such design is successfully demonstrated using finite-element micromagnetic simulation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
