Multi-dimensional models of sic power mosfet for accurately predicting the characteristics

Abstract

The paper presents a compact simulation program with integrated circuit emphasis (SPICE) model for a 1200V/19A Silicon Carbide power metallic oxide semiconductor field effect transistor (MOSFET). Based on an equivalent circuit topology, the model completely describes the static and dynamic device characteristics which include the MOSFET channel current, the nonlinear junction capacitance and the switching behavior. Especially the parasitic elements effect is also considered and studied during the modeling, testing and simulation. The model parameters are extracted based on the experimental measurement data. For convenience, the model is implemented by Verilog-A description language and embedded in the simulation software – Advanced Design System (ADS). The validity and accuracy of the model are validated by the double pulse test under inductor load. The Verification result shows that the modeling job is correct and available for prediction of the switching performance under different conditions.