Abstract
A novel ion projection lithography (IPL) technique called maskless-micro-beam reduction lithography (MMRL) is being developed at the Lawrence Berkeley National Laboratory. Instead of a thin stencil mask, this new ion projection lithography scheme utilizes a thicker universal pattern generator (or beam forming electrode) which contains switchable beamlets. Both single aperture and nine-aperture beam extraction systems have been used to test the switching scheme. In the single aperture case, an ion beam current of 23 nA was extracted and successfully turned off when a positive voltage was applied on the second electrode. For the nine-hole system, ion beams were switched on and off selectively and independently from each other. It has been demonstrated that electron beam switching can be achieved in a similar manner.
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