Abstract
Details about the MOVPE growth of thick single crystal CdZnTe layers on (211)Si substrates are presented. The growth was carried out at a substrate temperature of 650°C, using dimethylcadmium, dimethylzinc, and diethyltellurium precursors. Control of Zn-concentration in the range from 0 to 0.2 was performed by controlling the precursors' flow-rates and ratio. Results from the XRD showed grown layers were single crystalline with no phase separation observed. The 4.2 K PL results show high intensity bound-exciton peaks which shifted to higher energies with increasing Zn-concentrations. A p-CdZnTe/p-CdTe/n-CdTe/n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -Si hetero-junction diode was fabricated and evaluated for its possible application in nuclear radiation detector development, which exhibited good rectification property.
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