Abstract
We demonstrate that thicker layers can be achieved in gallium nitride (GaN) epitaxy by using a patterned silicon (Si) substrate compared to a planar Si substrate. GaN films were grown by metalorganic vapour-phase epitaxy on 6-inch Si (111) substrates patterned with arrays of squares with various corner shapes, height and lateral dimensions. Stress spatial distributions in the GaN pattern units were mapped out using confocal Raman spectroscopy. It was found that the corner shapes have an effect on the uniformity of the stress distribution. Patterns with round corners were found to have more uniform stress distribution than those with sharp corners. The largest crack-free square size for a 1.5 μm thick GaN film is 500 × 500 μm2.
Highlights
The continuous improvement of III-Nitrides growth processes opens a new possibility for future power devices
The gallium nitride (GaN) layer grown by metalorganic vapour-phase epitaxy (MOVPE) results in tensile stresses on Si wafer and in compressive stresses on sapphire [3]
We present a systematic study on the effect of patterned Si substrate parameters on epitaxial growth and resulting layer quality
Summary
Iurii Kim1,2 , Joonas Holmi , Ramesh Raju, Atte Haapalinna and Sami Suihkonen. Iurii Kim1,2 , Joonas Holmi , Ramesh Raju, Atte Haapalinna and Sami Suihkonen1 Original content from this Abstract work may be used under We demonstrate that thicker layers can be achieved in gallium nitride (GaN) epitaxy by using a the terms of the Creative Commons Attribution 4.0 patterned silicon (Si) substrate compared to a planar Si substrate. Any further distribution of this work must maintain various corner shapes, height and lateral dimensions. Stress spatial distributions in the GaN pattern attribution to the author(s) and the title of units were mapped out using confocal Raman spectroscopy. It was found that the corner shapes have the work, journal citation an effect on the uniformity of the stress distribution. More uniform stress distribution than those with sharp corners. 1.5 μm thick GaN film is 500 × 500 μm
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