Abstract
AbstractInGaAsN T‐shaped quantum wire (T‐QWR) lattice‐matched to GaAs was grown by metal organic vapour‐phase epitaxy (MOVPE) and its optical property was investigated. The InGaAsN T‐QWR was observed at the intersection of two InGaAsN quantum wells (QWs) on (001) and (110) surfaces, namely QW1 and QW2, respectively. In, N contents and well‐thickness in QW1 and QW2 were determined by high resolution X‐ray diffraction (HRXRD). Photoluminescence (PL) was taken to obtain excitonic states in the one‐dimensional T‐QWR as well as QW1 and QW2. High PL intensity reveals an achievement of high quality T‐QWR. At low‐temperature, InGaAsN T‐QWR exhibits an emission at around 1.141 eV with a large lateral confinement of about 61 and 99 meV for QW1 and QW2, respectively. This method for producing InGaAsN T‐QWR may be useful for optical or electronic device applications.
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