Abstract
In this work, a novel 2D material-based Thickness Engineered Tunnel FET (MoS2 TE-TFET) has been proposed and investigated. The impact of channel layer thickness variation on bandgap, has been used in the device to improve ION current. A comparative analysis has been done at different channel lengths like 7 nm, 10 nm, 14 nm, and 22 nm. For devices with channel length of 10 nm, the ION is enhanced up to 1 μA/μm with subthreshold slope of 11.6 mV/decade and improved ION/IOFF ratios of 1013 have been obtained. Additionally, the RF/analog performances of the device have been explored and the parameters like TFP, TGF, τ have been analyzed.
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