Abstract
GaAs needle crystals with the zincblende structure were grown by reacting a mixture of Ga and Ga 2O 3 with As in a closed quartz tube. The six lateral surfaces of the needles are parallel to the {112} planes. The growth axis is the [111] polar direction. Some of them changed their growth axis from one of the <111 > polar axes to another during growth. Examinations of the crystals by scanning electron microscopy and X-ray diffraction clarified the detailed morphology. The polarity of grown crystals was determined from a study of etch pits revealed on the {111} and {112} planes by an HF+H 2O 2 etchant.
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