Abstract
Electron diffraction X-ray (EDX) microanalysis and micro-Raman spectroscopy were used to study the annealed semiconductor surfaces. EDX images showed evidences of two types of regions on the annealed GaAs and GaSb surfaces. Micro-Raman results displayed good proof of two different regions into the surface of both semiconductors, since the spectra of one region showed considerable differences to the spectra of the other. The most notable difference is the transverse optical (TO) activation and the decrease of intensity of other Raman lines in the spectra of very small regions. This work calls attention to the sensibility of micro-Raman experiments to short-length defects, which cannot be detected by EDX analysis.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
