Abstract
In this work we present the application of ion beam assisted deposition (IBAD) to the growth of β-FeSi 2. Iron disilicide films, about 120 nm thick, were obtained by the deposition of Fe onto (001) Si single crystal maintained at T=600°C. During evaporation a low energy (120–650 eV) Ar + ion beam bombarded the growing film. Scanning and transmission electron microscopies were used to characterize respectively the morphology and structure of the deposited layer. A reduction in both the surface roughness and grain size was observed in the IBAD films with respect to those grown by standard deposition techniques. Moreover, a remarkable enhancement of the epitaxy was found for one of the IBAD samples.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
