Abstract
This work presents results regarding the influence of the Bi content on the morphology and electrical transport properties of SnS:Bi thin films grown by sulfurization of the metallic precursors on a soda-lime glass substrate. The SnS:Bi films were characterized through atomic force microscopy and electrical conductivity measurements. The results showed that the Bi content affects the grain size and roughness of the SnS:Bi films. The grain size affects the carrier mobility and therefore the electrical conductivity at room temperature. Measurements of conductivity as a function of temperature, carried out in the range between 90K and 630K, revealed the electrical transport in SnS:Bi thin films is affected by two different mechanisms: at temperatures greater than 350K, the conductivity is predominantly affected by free carrier transport in extended states of the conduction/valence band, whereas at temperatures below 350K the conductivity is mainly determined by the variable range hopping transport mechanism.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
