Abstract
Homoepitaxial diamond films were grown by microwave plasma chemical vapor deposition (CVD) on diamond substrates with (100) orientation. It was shown that the variation of the acetone concentration affected directly the morphology and structure of epitaxial films. With increasing acetone concentration, the growth pattern changed from the occurence of a linear arrangement of growth spiral (0.9 vol%) and parasitic nuclei (1.7 vol%) to the appearance of a local cellular structure (2.6 vol%). Addition of argon to reaction gases enhanced two-dimensional growth and depressed parasitic nucleation, leading to epitaxial single crystal films with both smooth surface and high degree of crystallinity.
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