Abstract
A Monte-Carlo computer program which is composed of ion implantation simulation and deposition calculation is described. It is applied to study TiN film growth by reactive ion-beam assisted deposition in a N2 gas environment. The relationship between film composition and nitrogen partial pressure in the processing chamber is established. The influence of ion energy, atomic arrival rate ratio and ion species on the thickness of the film is studied. We also investigated the intermixing at the interface region between the film and substrate. The calculated data are compared with experimental results.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
