Abstract
Terahertz emission from the freestanding multilayer GaAs/AlGaAs δ-doped heterostructure illuminated by a femtosecond optical pulse is investigated by ensemble Monte Carlo simulations. It is shown that the amplitude of transient photocurrent and the energy of terahertz emission from the multilayer δ-doped heterostructure strongly depend on the thickness of GaAs absorption layers. The emitted energy increases as the thickness of the GaAs absorption layers decreases. The conduction band nonparabolicity and the electron intervalley transfer into upper valleys reduce the energy of terahertz emission. The main factor limiting the intensity of terahertz emission at a very small thickness of GaAs absorption layers is identified.
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