Abstract
Simulation of copper electrodeposition in the presence of a hypothetical blocking additive was carried out by a linked continuum/noncontinuum numerical code for various geometric configurations in the shape of a rectangular trench. The mechanism of copper electrodeposition described in Part I of this series was extended to include a single additive species. The hypothetical additive had the property that it blocks deposition but is consumed at the surface, and that its arrival at the electrode surface is transport-limited so that leveling occurs. With use of numerical simulations carried out with a linked Monte Carlo-finite difference code described in Part I, the effect on trench in-fill of additive concentration, adsorption rate, consumption (breakdown) rate, and trench aspect ratio was investigated. © 2002 The Electrochemical Society. All rights reserved.
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