Abstract
Steady-state velocity-field characteristics in AlxGa1-x As are calculated for a wide range of composition, doping, and temperature variations, using Monte Carlo techniques. The results are related to the scattering mechanisms which are responsible for the observed transport parameters. A single empirical expression is formulated to fit all the Monte Carlo data. This expression incorporates all the nonlinear transport effects and would be useful for numerical simulation of device models. A general methodology is also presented for formulating such expressions, and the results are applicable to modelling field-dependent mobility in AlxGa1-x As devices.
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