Abstract
A low power GaAs-based monolithically integrated phototransceiver, consisting of a high gain phototransistor and a microcavity light-emitting diode, is demonstrated. The input and output wavelengths are 0.85 and 0.98 /spl mu/m, respectively. The phototransceiver exhibits an optical gain of 7 dB and power dissipation of 400 /spl mu/W for an input power of 1.5 /spl mu/W. The small signal modulation bandwidth is 80 MHz.
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