Monolithically integrated InGaN/GaN light-emitting diodes, photodetectors, and waveguides on Si substrate

Abstract

The characteristics of monolithically integrated light-emitting diodes (LEDs), photodetectors (PDs), and waveguides on a GaN-on-Si wafer are investigated. The InGaN/GaN multi-quantum wells, which are responsible for blue light emission in LEDs, are also used for photodetection in PDs. Despite the Stokes shift, a spectral overlap of ∼25 nm between the emission and absorption spectra provides the PDs with sufficient photosensitivity to signals from the emitter while remaining insensitive to ambient lighting. Optical interconnects in the form of linear or bent suspended waveguides bridging the LEDs and PDs are formed by selective detachment of etched GaN mesas from the Si substrate. Additionally, the PDs can be detached from the substrate and remounted on an elevated platform, owing to the flexibility of the thin-film waveguide. The 150 μm×150 μm LEDs and PDs exhibit rapid response on nanosecond time scales, which is attributed to fast radiative recombinations as well as minimized resistive-capacitive (RC) delays, enabling transmission of pseudorandom binary sequence (PRBS) data signals at rates of 250 Mb/s with an opening in the eye diagram. Together with multichannel transmission free of crosstalk, the ability of the planar and three-dimensional monolithic photonic systems to handle visible-light communication (VLC) applications is demonstrated.