Abstract
A broadband monolithic linear single-pole, sixteen-throw (SP16T) antenna switch has been designed and fabricated in 180 nm thin film SOI CMOS process, which is intended for the next generation multimode multiband (MMMB) cellular applications. The switch features the minimum 0.7 dB and average 1dB insertion loss, 0.1 dB compression point of 29 dBm and at least 33 dB isolation at all cellular bands for mobile front ends by applying distributed architecture and adaptive supply voltage generator. To the best of our knowledge, this work is the first demonstration of SP16T antenna switch with superior isolation and power handling capacities for most of the known cellular bands with satisfactory harmonic and intermodulation distortion performance on SOI. The simulated and measured results show excellent agreement.
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