Abstract
This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics is insulated from a (high-resistivity) silicon substrate by a buried oxide. Vias etched through the oxide allow to contact the substrate from the electronics layer, so that pixel implants can be created and a reverse bias can be applied. The prototype chip, manufactured in OKI 0.15 μ m SOI process, features both analog and digital pixels on a 10 μ m pitch. Results of tests performed with an infrared laser and 1.35 GeV electrons and a first assessment of the effect of ionising and non-ionising doses are discussed.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
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