Abstract
The integration of an on-chip dipole antenna with a monolithic 24 GHz receiver manufactured in a 0.8 /spl mu/m SiGe HBT process is presented. A high resistivity silicon substrate (1000 /spl Omega/cm) is used for the implemented circuit to improve the efficiency of the on-chip antenna. The receiver, including the receive and an optional transmit antenna, requires a chip area of 7.3 mm and delivers 33 dB conversion gain at 24 GHz.
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