Abstract
A fully CMOS-compatible HVIC technology has been developed that features 5 V high-performance digital CMOS with high-voltage devices of more than 400 V. This technology uses only one or two masks in addition to standard p-well CMOS technology. Design optimization has been achieved to meet the needs of both CMOS and high-voltage devices. A large number of different devices are available in this technology, including bipolar transistors, lateral MOS gate power devices, and high-voltage p-channel power devices. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
