Abstract
We have optimized the growth conditions of (Ga,Al)As/GaAs heterojunction bipolar phototransistors (HPT's) using MOCVD or MBE techniques. Devices with current-gains higher than 3000 and low input capacitances have been obtained using a fabrication process suitable for IC's. A photoreceiver has been designed with predicted performances of -39.5 dBm at 140 Mbits/s.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica B+C
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
