Abstract
Memcapacitor model based on its one possible physical realization is developed and simulated in order to know its limitation before making a real device. The proposed device structure consists of vertically stacked dielectric layer and MoS2 monolayer between two external metal plates. The Metal Insulator Transition (MIT) phenomenon of MoS2 monolayer is represented in terms of percolation probabilty which is used as the system state. Cluster based site percolation theory is used to mimic the MIT of MoS2 which shows slight discontinuous change in MoS2 monolayer conductivity. The metal to insulator transition switches the capacitance of the device in hysterical way. An Ioffe Regel criterion is used to determine the MIT state of MoS2 monolayer. A good control of MIT time in the range of psec is also achieved by changing a single parameter in the model. The model shows memcapacitive behavior with an edge of fast switching (in psec range) over the previous general models. The model is then extended into vertical cascaded version which behaves like a ternary device instead of binary.
Highlights
Memristor was first introduced by Leon Chua in 1971 on the basis of his famous symmetry argument to conceive it theoretically.[1]
Monolayer MoS2 metal insulator transition based memcapacitor modeling with extension to a ternary device
The proposed device structure shown in figure 1a which consists of an MIT material layer and a dielectric layer embedded between two external metal plates
Summary
Memristor was first introduced by Leon Chua in 1971 on the basis of his famous symmetry argument to conceive it theoretically.[1]. Monolayer MoS2 metal insulator transition based memcapacitor modeling with extension to a ternary device
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