Abstract
For monitoring the effectiveness of internal gettering during the sequence of technological processes, established investigation techniques have been applied and compared to results obtained by the palladium test and the recently developed iron test. The iron test enables a quantitative determination of the getter efficiency and of the precipitation behavior of as‐received ingot wafers due to DLTS measurements performed after an intentional contamination of the wafers. By this means the influence of various process conditions on the gettering behavior could be determined. It was found that the temperature of proceeding heat‐treatments should not exceed 1130°C to conserve internal getter efficiency during the processing. Internal gettering was found to be mainly due to the presence of bulk stacking faults, and it does not depend on the density of oxygen precipitates.
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