Abstract
Three volatile mixed-metal precursors [ZrL4Pb(hfa)2] (1), [ZrL4PbL2] (2), and [ZrL4La(dpm)3] (3) (L = 2-methoxy-2,6,6-trimethyl-3,5-heptanedionate; dpm = 2,2,6,6-tetramethyl-3,5-heptanedionate; hfa = 1,1,1,5,5,5-hexafluore-2,4-pentanedionate) are used to prepare ZrO2-based multicomponent films by metalorganic chemical vapor deposition (MOCVD). The deposition experiments are carried out in a hot-wall reactor at 600-750 °C on silicon substrates under 20 Torr in the presence of oxygen. According to X-ray powder diffraction, the main crystal phases in the films prepared from precursors 1 and 2 are solid solutions based on tetragonal and cubic ZrO2. Lead does not form separate crystal phases but is dissolved in the oxide form within the ZrO2 matrix, as is indicated by X-ray photoelectron spectroscopy data. La2Zr2O7 films are prepared from 3 using two ways of precursor supply: evaporation in argon and by direct liquid injection (DLI). It is shown that the composition and structure of obtained films are determined by the precursor composition. The results obtained for thermal behavior of precursors in condensed and gas phases are discussed.
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