Abstract
We report a Cu K-edge resonant inelastic X-ray scattering (RIXS) study of high- T c cuprates. Momentum-resolved charge excitations in the CuO 2 plane are examined from parent Mott insulators to carrier-doped superconductors. The Mott gap excitation in undoped insulators is found to commonly show a larger dispersion along the [ π , π ] direction than the [ π , 0 ] direction. On the other hand, the resonance condition displays material dependence. The Mott gap persists in carrier-doped states. Upon hole doping, the dispersion of the Mott gap excitation becomes weaker associated with the reduction of antiferromagnetic correlation and an intraband excitation appears as a continuum intensity below the gap at the same time. In the case of electron doping, the Mott gap excitation is prominent at the zone center and a dispersive intraband excitation is observed at finite momentum transfer.
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