Abstract
Molecular-beam epitaxy of an (Al)GaAsN alloy was demonstrated using uncracked ammonia as the nitrogen source. It was found that the efficiency of nitrogen incorporation into the alloy layers was dramatically enhanced when aluminum flux was supplied during growth. The nitrogen composition of an Al0.07Ga0.93As1−yNy layer grown at 580 °C was approximately 100 times larger than that of a GaAs1−yNy layer grown at the same growth condition without the aluminum supply. The nitrogen incorporation into the AlxGa1−xAs1−yNy layers was found to be proportional to the aluminum composition x. The activation energy of nitrogen incorporation was measured to be 195 kJ/mol.
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