Abstract
2D Sn2+-Based Perovskites In article number 2204870, Yong-Young Noh and co-workers demonstrate the high doping efficiency of halide perovskites using a simple molecular charge transfer approach and provides a new opportunity for employing 2D perovskites in high-efficiency optoelectronic devices. A thin p-type dopant layer, F4-TCNQ and MoO3, deposited using thermal evaporation improves the control of damage-free electronic doping. The efficient charge transfer without deterioration of the perovskite microstructure improves the Hall mobility up to 100 cm2 V−1 s−1.
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