Abstract
Wurtzite—CdSe epitaxial layers on GaAs(1 1 1)A and B substrates were grown by molecular beam epitaxy using elemental Cd and Se beams. A distinct RHEED oscillation of a specular spot intensity was observed during ALE growth of CdSe on GaAs(1 1 1)B, but the oscillation on GaAs(1 1 1)A was poor. A GaAs(1 1 1)B substrate is superior to GaAs(1 1 1)A substrate for the layer-by-layer growth of wurtzite CdSe. The activation energy of Se desorption from the GaAs(1 1 1)B surface was determined as 1.2 ± 0.1 eV by analyzing the temporal specular beam intensity. The crystallographic and luminescence properties are also presented.
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