Abstract
Rapid progress of quantum transport study in topological Dirac semimetal, including observations of quantum Hall effect in two-dimensional (2D) Cd3As2 samples, has uncovered even more interesting quantum transport properties in high-quality and three-dimensional (3D) samples. However, such 3D Cd3As2 films with low carrier density and high electron mobility have been hardly obtained. Here, we report the growth and characterization of 3D thick Cd3As2 films adopting molecular beam epitaxy. The highest electron mobility (μ = 3 × 104 cm2/Vs) among the reported film samples has been achieved at a low carrier density (n = 5 × 1016 cm−3). In the magnetotransport measurement, Hall plateau-like structures are commonly observed despite the 3D thick films (t = 120 nm). On the other hand, the field angle dependence of the plateau-like structures and corresponding Shubunikov-de Haas oscillations rather shows a 3D feature, suggesting the appearance of an unconventional magnetic orbit, also distinct from the one described by the semiclassical Weyl-orbit equation.
Highlights
Topological Dirac semimetal (DSM) is characterized by surface Fermi arcs and bulk Dirac dispersions along any directions in three-dimensional (3D) momentum space.1–5 As the DSM is driven into other exotic topological phases including the Weyl semimetal, topological insulator, and trivial insulator such as by symmetry breaking or dimensionality control,2,3,6–8 it has attracted both theoretical and experimental research efforts as an ideal parent material
DSM has gathered significant interest because of its characteristic quantum transport originating from the nontrivial electronic structure; for example, surface conduction based on Fermi-arcs9 and negative magnetoresistance induced by chiral anomaly
A number of studies have been reported on the quantum transport in Cd3As2,18,20–22 including the observations of quantum Hall effect (QHE)
Summary
ARTICLES YOU MAY BE INTERESTED IN Thickness dependence of the quantum Hall effect in films of the three-dimensional Dirac semimetal Cd3As2 APL Materials 6, 026105 (2018); https://doi.org/10.1063/1.5016866 Molecular beam epitaxy of Cd3As2 on a III-V substrate APL Materials 4, 126110 (2016); https://doi.org/10.1063/1.4972999 Field-effect transistors with the three-dimensional Dirac semimetal cadmium arsenide Applied Physics Letters 115, 062101 (2019); https://doi.org/10.1063/1.5103268
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