Abstract
We have successfully grown single-crystalline ferromagnetic MnAs thin films on (001) GaAs substrates by molecular beam epitaxy. By reflection high energy electron diffraction and x-ray measurements, the growth direction of the MnAs thin films was found to be [100] on (001) GaAs, and the epitaxial relationship was [0001] MnAs //[10] GaAs and [110] MnAs // [110] GaAs. Magnetization measurements at room temperature have revealed that the epitaxial MnAs thin films have strong magnetic anisotropy, and that the easy magnetization direction is in-plane, along the [110] axis of the MnAs thin films which is parallel to the [110] axis of the GaAs substrate, with almost perfect square hysteresis loops, relatively high remanent magnetization, and low coercive field.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
