Abstract
High frequency modulation of semiconductor laser output radiation is one of the most important problems of optoelectronics. The method of laser output radiation modulation by pumping current is widely used at present. However, it is followed by falling modulation efficiency at modulating signal frequencies exceeding several gigaHertz. A new method of effective modulation heterolasers radiation was proposed in [1,2] consisting of charge carrier heating in an active laser area by the external microwave electric field. The present paper is dealing with the discussion of new results of theoretical and experimental study in the field of heterolaser radiation microwave modulation and formation of picosecond optic pulses through the heating charge carriers in the active area of injection laser on the double heterostructure n p Al x Ga 1−x As−GaAs−p p Al x Ga 1−x As with classic and single quantum well.
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