Abstract
Modulation linearity of Si ring modulators (RMs) is investigated through the numerical simulation based on the coupled-mode theory and experimental verification. Numerical values of the key parameters needed for the simulation are experimentally extracted. Simulation and measurement results agree well. With these, the influence of input optical wavelength and power on the Si RM linearity are characterized.
Highlights
P ERFORMANCE of microwave photonics (MWP) systems are often strongly influenced by the linearity of optical modulators that convert microwave signals into the optical domain
The spurious-free dynamic range (SFDR) of the employed optical modulator is the key parameter that determines the performances of such MWP systems as radio-over-fiber (RoF) transmission links [1]–[3], MWP frequency converters [4]–[6], optical beamforming [7], photonic analog-to-digital converters (ADCs) [8] and microwave photonic filters [9], [10]
When RF signals, Vin(t), are applied to a Si ring modulators (RMs), the voltage applied to the PN junction of Si RM, Vj(t), at a given time is first determined using the nonlinear filter response of the electrical equivalent circuit shown in Fig. 3(a) with the extracted circuit parameter values
Summary
P ERFORMANCE of microwave photonics (MWP) systems are often strongly influenced by the linearity of optical modulators that convert microwave signals into the optical domain. In [20], the transfer function of the Si RM is modeled with a Lorentzian function and, with it, the source of nonlinearity is investigated, but detailed linearity characteristics such as the SFDR dependence on the input wavelength or optical power is not provided. We determine how Si RM linearity characteristics change depending on input wavelength (λin) and power (Pin). Numerical analyses based on the CMT are performed, and the results are verified with experimental measurement. These results allow one to select the optimal Si RM λin and Pin for the desired target linear or nonlinear applications.
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