Abstract
We show the modulation instability of broad optical beams inbiased photorefractive–photovoltaic crystals under steady-stateconditions. This modulation instability growth rate depends on theexternal bias field, the bulk photovoltaic effect, and the ratio of theoptical beam intensity to that of the dark irradiance.Under appropriate conditions, this modulation instability growth rateis the modulation instability growth rate studied previously in biasedphotorefractive–nonphotovoltaic crystals, and the modulationinstability growth rate in open- and closed-circuitphotorefractive–photovoltaic crystals can be predicted.
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