Abstract
The strength, polarity, and temperature dependence of the exchange bias field in ferromagnet/antiferromagnet thin film systems depend critically on the nature of the interfacial microstructure. Using ion bombardment during film deposition, we have found a way to modulate the interface microstructure, providing unique control over the exchange bias magnetism. We demonstrate interfacial microstructure modulation in Ni80Fe20/(Ni,Fe)O thin films, where different ion bombardment energies alter the exchange coupling between the (Ni,Fe)O and Ni80Fe20 interfaces. One interface configuration provides positive or negative exchange coupling depending on whether the film was cooled with or without an external magnetic field, while another interface configuration results in the more typical negative exchange coupling independent of the field cooling.
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