Abstract
This paper proposes a modified engineered-potentialwell (MW) for NAND flash memory application. The MW was formed by using a transitional SiO2/SiOx,Na-TiOx,Ny tunnel barrier, a trap-rich TiO2 trapping layer, and an abrupt SiO2 block barrier. The transitional tunnel barrier shrinks to enhance the tunneling of carriers during programming/erasing (P/E) and extends to suppress charge loss during data retention. Deep-level transient spectroscopy suggests that this tunnel barrier has few shallow traps after a N2 + O2 thermal treatment, and the TiO2 trapping layer has deep electron traps. With the variable tunnel barrier and deep electron traps, the MW device showed promising performance in fast programming ( 106 P/E cycles), large threshold voltage window (ΔVth =M> V), as well as improved data retention at 125 °C.
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