Abstract
The effect of ion irradiation on ZnO thin film's crystal orientation during dual ion beam sputtering deposition is studied. Glass and Si substrates are irradiated during depostion by oxygen and argon ions. The irradiating oxygen ions are swept away from the substrate by a cross-electric field to examine the effect of high energy neutral atoms on crystal orientation. Argon and oxygen positive ions prepared in a saddle field ion gun can effectively form c-axis orientation in ZnO film deposition. But oxygen high energy neutral atoms tend to deform the c-axis orientation of the films. ZnO film prepared by this method is useful in the production of devices with good piezoelectric and pyroelectric properties.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
